G4SiPM
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  • 1. Getting started
  • 2. Sample simulation
  • 3. Concepts
    • 3.1. Properties files
    • 3.2. G4Sipm model
    • 3.3. G4Sipm config file model
    • 3.4. G4Sipm voltage trace model
    • 3.5. G4Sipm gain map model
    • 3.6. G4Sipm hit
    • 3.7. G4Sipm sensitive detector
    • 3.8. G4Sipm sensitive detector filter
    • 3.9. G4Sipm digi
    • 3.10. G4Sipm digitizer
    • 3.11. G4Sipm voltage trace digitizer
    • 3.12. G4Sipm cell fire controller
  • 4. Application development
G4SiPM
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  • 3. Concepts
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3. Concepts¶

This section describes the core concepts which have been used to build G4Sipm.

  • 3.1. Properties files
    • 3.1.1. Definition of a property
    • 3.1.2. Definition of a properties table
      • 3.1.2.1. Example
    • 3.1.3. Source
  • 3.2. G4Sipm model
    • 3.2.1. Working conditions
    • 3.2.2. SiPM properties
      • 3.2.2.1. SiPM properties as a function of the temperature and over-voltage
    • 3.2.3. Source
  • 3.3. G4Sipm config file model
    • 3.3.1. Working conditions
    • 3.3.2. SiPM properties
    • 3.3.3. Config file example
    • 3.3.4. Source
  • 3.4. G4Sipm voltage trace model
    • 3.4.1. Voltage trace properties
      • 3.4.1.1. Source
  • 3.5. G4Sipm gain map model
    • 3.5.1. Random gain map model
    • 3.5.2. Gaussian gain map model
    • 3.5.3. Source
  • 3.6. G4Sipm hit
    • 3.6.1. G4Sipm hit collection
    • 3.6.2. Source
  • 3.7. G4Sipm sensitive detector
    • 3.7.1. Source
  • 3.8. G4Sipm sensitive detector filter
    • 3.8.1. Dead space
    • 3.8.2. Photon detection efficiency
    • 3.8.3. Source
  • 3.9. G4Sipm digi
    • 3.9.1. G4Sipm digi collection
    • 3.9.2. Source
  • 3.10. G4Sipm digitizer
    • 3.10.1. Thermal noise
    • 3.10.2. Correlated noise
    • 3.10.3. Source
  • 3.11. G4Sipm voltage trace digitizer
    • 3.11.1. G4Sipm voltage trace digi collection
      • 3.11.1.1. Source
  • 3.12. G4Sipm cell fire controller
    • 3.12.1. Source
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© Copyright 2016, Tim Niggemann, Erik Dietz-Laursonn, Thomas Hebbeker, Andreas Künsken, Markus Lauscher, Markus Merschmeyer (III. Physikalisches Institut A, RWTH Aachen University). Revision 40b0017f.

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